BC856S Просмотр технического описания (PDF) - NXP Semiconductors.
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BC856S Datasheet PDF : 12 Pages
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NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor
ICBO
collector-base cut-off VCB = −30 V; IE = 0 A
-
current
VCB = −30 V; IE = 0 A;
-
Tj = 150 °C
IEBO
emitter-base cut-off VEB = −5 V; IC = 0 A
-
current
hFE
VCEsat
VBEsat
VBE
Cc
DC current gain
VCE = −5 V; IC = −2 mA
collector-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
IC = −100 mA; IB = −5 mA
base-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
base-emitter voltage IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
collector capacitance IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
110
-
[1] -
-
−600
-
-
fT
transition frequency IC = −10 mA; VCE = −5 V;
100
f = 100 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ
-
-
-
-
-
-
700
−650
-
-
-
Max
−15
−5
−100
-
−100
−300
-
−750
−820
2.5
-
Unit
nA
µA
nA
mV
mV
mV
mV
mV
pF
MHz
BC856S_2
Product data sheet
Rev. 02 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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