BC856S Просмотр технического описания (PDF) - NXP Semiconductors.

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BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors. 

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Rev. 02 — 19 February 2009

Product data sheet

1. Product profile

1.1 General description

PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)

Surface-Mounted Device (SMD) plastic package.

1.2 Features

I Low collector capacitance

I Low collector-emitter saturation voltage

I Closely matched current gain

I Reduces number of components and board space

I No mutual interference between the transistors

1.3 Applications

I General-purpose switching and amplification

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Per transistor

VCEO

IC

hFE

collector-emitter voltage open base

collector current

DC current gain

VCE = −5 V;

IC = −2 mA

Min Typ Max Unit

-

-

-

-

110 -

−65 V

−100 mA

-

2. Pinning information

Table 2.

Pin

1

2

3

4

5

6

Pinning

Description

emitter TR1

base TR1

collector TR2

emitter TR2

base TR2

collector TR1

Simplified outline Graphic symbol

654

654

123

TR2

TR1

123

sym018

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