BC857C,215 Просмотр технического описания (PDF) - NXP Semiconductors.
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BC857C,215 Datasheet PDF : 14 Pages
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Nexperia
BC856; BC857; BC858
65 V, 100 mA PNP general-purpose transistors
1000
hFE
(1)
800
600
(2)
400
(3)
200
aaa-028119
- 1200
VBE
(mV)
- 1000
- 800
(1)
(2)
- 600
- 400
(3)
- 200
mgt720
0
-10-1
-1
-10
-102
-103
IC (mA)
VCE = -5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 9. BC857C: DC current gain as a function of
collector current; typical values
- 104
mgt721
VCEsat
(mV)
0
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
VCE = -5 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 10. BC857C: Base-emitter voltage as a function
of collector current; typical values
- 1200
VBEsat
(mV)
- 1000
mgt722
- 103
(1)
- 800
(2)
- 600
- 102
(1)
(3) (2)
(3)
- 400
- 200
- 10
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 11. BC857C: Collector-emitter saturation voltage
as a function of collector current; typical values
0
- 10- 1
-1
- 10
- 102
- 103
IC (mA)
IC/IB = 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 12. BC857C: Base-emitter saturation voltage as a
function of collector current; typical values
BC856_BC857_BC858
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 16 April 2018
© Nexperia B.V. 2018. All rights reserved.
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