BC857C,215 Просмотр технического описания (PDF) - NXP Semiconductors.

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BC857C,215

65 V, 100 mA PNP general-purpose transistors

NXP Semiconductors. 

Nexperia

BC856; BC857; BC858

65 V, 100 mA PNP general-purpose transistors

600

(1)

hFE

400

(2)

200

(3)

aaa-028118

- 1200

VBE

(mV)

- 1000

mgt716

(1)

- 800

(2)

- 600

- 400

(3)

- 200

0

-10-1

-1

-10

-102

-103

IC (mA)

0

- 10- 2 - 10- 1

-1

- 10

- 102

- 103

IC (mA)

VCE = -5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

VCE = -5 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Figure 5. BC856B; BC857B; BC858B: DC current gain as Figure 6. BC856B; BC857B; BC858B: Base-emitter

a function of collector current; typical values

voltage as a function of collector current; typical values

- 104

VCEsat

(mV)

mgt717

- 1200

VBEsat

(mV)

- 1000

mgt718

- 103

(1)

- 800

(2)

- 102

(1)

- 600

(3)

- 400

(3) (2)

- 200

- 10

- 10- 1

-1

- 10

- 102

- 103

IC (mA)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Figure 7. BC856B; BC857B; BC858B: Collector-emitter

saturation voltage as a function of collector current;

typical values

0

- 10- 1

-1

- 10

- 102

- 103

IC (mA)

IC/IB = 20

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Figure 8. BC856B; BC857B; BC858B: Base-emitter

saturation voltage as a function of collector current;

typical values

BC856_BC857_BC858

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 7 — 16 April 2018

© Nexperia B.V. 2018. All rights reserved.

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