2N6298 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N6298 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6298
2N6299
IC=-0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-16mA
VCEsat-2 Collector-emitter saturation voltage IC=-8A; IB=-80mA
VBEsat Base-emitter saturation voltage
IC=-8A; IB=-80mA
VBE
Base -emitter on voltage
IC=-4A ; VCE=-3V
2N6298
VCE=-60V; VBE(off)=-1.5V
TC=150℃
ICEX
Collector cut-off current
2N6299
VCE=-80V; VBE(off)=-1.5V
TC=150℃
2N6298 VCE=-30V; IB=0
ICEO
Collector cut-off current
2N6299 VCE=-40V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-3V
hFE-2
DC current gain
IC=-8A ; VCE=-3V
COB
Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
Product Specification
2N6298 2N6299
MIN TYP. MAX UNIT
-60
V
-80
-2.0
V
-3.0
V
-4.0
V
-2.8
V
-0.5
-5.0
mA
-0.5
-5.0
-0.5
mA
-2.0
mA
750
18000
100
300
pF
2
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