2N5881 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2N5881 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5881 2N5882
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5881
2N5882
IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage
IC=7A;IB=0.7A
VCEsat-2 Collector-emitter saturation voltage
IC=15A;IB=3.75A
VBEsat Base-emitter saturation voltage
IC=15A;IB=3.75A
VBE
Base-emitter on voltage
IC=6A ; VCE=4V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
2N5881 VCE=30V; IB=0
ICEO
Collector cut-off current
2N5882 VCE=40V; IB=0
ICEX
Collector cut-off current
VCE=ratedVCE; VBE=1.5V
TC=150
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=4V
hFE-2
DC current gain
IC=6A ; VCE=4V
hFE-3
DC current gain
IC=15A ; VCE=4V
fT
Trainsistion frequency
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
60
V
80
1.0
V
4.0
V
2.5
V
1.5
V
0.5
mA
1.0
mA
0.5
5.0
mA
1.0
mA
35
20
100
4
4
MHz
2
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