MSK4250H Просмотр технического описания (PDF) - M.S. Kennedy Corporation
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производитель
MSK4250H Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS 8
V+
High
Voltage
Supply
9
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○ 75V
VIN Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○±13.5V
+Vcc ○
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○ +16V
-Vcc
-18V
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IOUT Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 20A
ELECTRICAL SPECIFICATIONS
θJC Thermal Resistance @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ 4.9°C/W
TST Storage Temperature Range ○ ○ ○ -65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(10 Seconds)
TC Case Operating Temperature
MSK4250 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -40°C to +125°C
MSK4250H ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
All Ratings: Tc=+25°C Unless Otherwise Specified
Parameter
POWER SUPPLY REQUIREMENTS
+Vcc
-Vcc
PWM
Free Running Frequency
CONTROL
Transconductance 7
Current Monitor 7
Output Offset
ERROR AMP
Input Voltage Range 1
Slew Rate 1
Output Voltage Swing 1
Gain Bandwidth Product 1
Large Signal Voltage Gain 1
OUTPUT
Rise Time 1
Fall Time 1
Leakage Current 1
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
Drain-Source On Resistance (Each MOSFET) 6
Diode VSD 1
TRR 1
Dead Time 1
Test Conditions
Group A
Subgroup
45
@ +15V
@ -15V
1,2,3
1,2,3
4
5,6
±10 Amps Output
±10 Amps Output
@ 0 Volts Command
4,5,6
4,5,6
4
5,6
-
-
-
-
-
-
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@ 64V, +150°C Junction
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@ 10 Amps
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@10Amps, +150°C Junction
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@ 10 Amps, 150°C Junction
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@ 10 Amps, Each FET
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IF=10 Amps, di/dt=100A/μS
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-
MSK 4250H 3
Min. Typ. Max.
-
60
85
-
16
35
23.5
25
26.5
21.25
25
28.75
1.9
0.425
-
-
2
0.5
±5.0
-
2.1
0.575
±25.0
±50.0
±11 ±12
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6.5
8
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±12 ±13
-
-
6.5
-
175
275
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100
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100
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750
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4.0
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5.0
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0.026
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2.6
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280
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2
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MSK 4250 2
Min. Typ. Max.
Units
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60
85
mA
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16
35
mA
22
25
28
KHz
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-
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KHz
1.8
0.40
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2
0.5
±5.0
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2.2
0.60
±35.0
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Amp/Volt
V/Amp
mAmp
mAmp
±11
6.5
±12
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175
±12
8
±13
6.5
275
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Volts
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V/μSec
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Volts
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MHz
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V/mV
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100
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nSec
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100
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nSec
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750 μAmps
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4.0
Volts
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-
5.0
Volts
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0.026
Ω
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2.6
Volts
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280
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nSec
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2
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μSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference
only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 This is to be used for MOSFET thermal calculation only.
7 Measurements do not include offset current at 0V current command.
8 Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle.
9 When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the
same time. Do not apply high voltage without low voltage present.
2
Rev. G 3/11
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