HSK1118 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HSK1118 Datasheet PDF : 5 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 3/5
Drain Current Variation & Gate Voltage &
Temperature
6
VDS=10V
5
Tc=100°C
Tc=25°C
4
3
2
1
0
0
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage (V)
On Resistance Variation & Temperature
4.0
VGS=10V
3.5
3.0
2.5
2.0
ID=3A
1.5
ID=6A
ID=1A
1.0
0.5
0.0
20
40
60
80
100
120
140
Tc, Case Temperature (°C)
Typical On-Resistance & Drain Current
2.4
VGS=10V
2.0
Tc=100°C
1.6
1.2
Tc=25°C
0.8
0.4
0.0
0
2
4
6
8
10
ID, Drain Current (A)
Transconductance Variation & Drain
Current & Temperature
10
VDS=10V
9
Tc=25°C
8
7
6
Tc=100°C
5
4
3
2
1
0
0
2
4
6
8
ID, Drain Current (A)
10000
1000
100
Capacitance Characteristics
Ciss
Crss
Coss
10
1
1
10
100
VDS, Drain-Source Voltage (V)
Typical On-Resistance & Drain Current
2.4
2.0
1.6
1.2
VGS=10V
0.8
VGS=15V
0.4
0.0
0
2
4
6
8
10
ID, Drain Current (A)
HSMC Product Specification
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