HSK1118 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HSK1118 Datasheet PDF : 5 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 2/5
Characteristics (Ta=25°C)
Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source On Voltage
On-State Drain Current
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain Charge (Miller)
Symbol Min. Typ. Max. Unit Test Conditions
V(BR)DSS 600 -
-V
VGS(th)
2
-
4V
IDSS
-
- 25 uA
IGSS
-
- ±100 nA
VDS(ON)
-
-
6V
ID(ON)
9
-
-A
RDS(ON) - 0.95 1.25 Ω
Ciss - 2000 - pF
Crss - 500 - pF
Coss - 740 - pF
ID=250uA
VDS=10V, ID=1mA
VDS=600V
VGS=±25V
ID=5.0A, VG=10V
VDS=10V, VGS=10V
VGS=10V, ID=3A
VDS=10V ,VGS=0V
f =1MHz
Tr
- 50 -
VIN : Tr, Tf<5nS
Ton
Tf
-
-
80
40
-
-
nS
VDD=300V, ID=3A
VGS=10V
Duty≤1%, tw=10uS
Toff
- 170 -
Qg
- 60 - nC ID=6A
Qgs
- 30 - nC VDS=400V
VGS=10V
Qgd
- 30 - nC
Characteristics Curve
On-Region Characteristic
5
VGS=10V
6V
5.5V
5V
4
10
10V
On-Region Characteristic
VGS=6V
8
5.5V
3
2
4.5V
1
4V
0
0
2
4
6
8
10
VDS , Drain-Source Voltage (V)
6
5V
4
2
4.5V
4V
0
0
20
40
60
80
100
VDS ,Drain-Source Voltage (V)
HSMC Product Specification
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