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BDX14A

PNP SILICON TRANSISTOR, EPITAXIAL BASE

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BDX14AA

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

VCE = -90V VBE = +1.5V

ICEX

Collector Emitter Cut Off Current

VCE = -30V VBE = +1.5V

Tcase = 150°C

VCEO(SUS)* Collector Emitter Breakdown Voltage IC = -100mA IB = 0

-55

W VCER(SUS)* Collector Emitter Breakdown Voltage IC = -100mA RBE = 100

-60

V(BR)EBO* Emitter Base Breakdown Voltage

IE = -1A

IC =0

-7

h21E*

Static Forward Current Transfer Ratio VCE = - 4V IC = - 0.5A

25

VCE(sat)* Collector Emitter Saturation Voltage IC = - 0.5A

IB = - 0.05A

VBE*

Base Emitter Voltage

VCE = - 4V

IC = - 0.5A

fT

Transition Frequency

VCB = -10V IC = - 0.2A

4

f = 1MHz

* Pulse test tp = 300ms , d < 2%

Typ.

Max.

-1

-5

Unit

mA

V

V

250 —

-1

V

-1.7

V

MHz

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Prelim. 02/00

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