BDX68C Просмотр технического описания (PDF) - Inchange Semiconductor
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BDX68C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX68/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min)@ IC= -20A
·Low Saturation Voltage
·Complement to Type BDX69/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX68
-80
BDX68A -100
VCBO
Collector-Base Voltage
V
BDX68B -120
BDX68C -140
BDX68
-60
BDX68A
-80
VCEO
Collector-Emitter Voltage
V
BDX68B -100
BDX68C -120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IBB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
-500
mA
150
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 ℃/W
isc Website：www.iscsemi.cn
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