CR03AM-12 Просмотр технического описания (PDF) - Renesas Electronics
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CR03AM-12 Datasheet PDF : 8 Pages
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CR03AM-12
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
RGK = 1kΩ
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
200
RGK = 1kΩ
180
160
140
120
100
Tj = 25°C
80
60
Tj = 110°C
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Holding Current vs.
Gate to Cathode Resistance
500
Typical Example
IGT(25°C) IH(1kΩ)
400
# 1 10µA 1.0mA
# 2 26µA 1.1mA
300
#1
#2
200
100
VD = 12V, Tj = 25°C
0
10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Gate to Cathode Resistance
160
Typical Example
140
Tj = 110°C
120
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate to Cathode Resistance (kΩ)
Holding Current vs.
Junction Temperature
102
7
RGK = 1kΩ
5
3
2
101
Distribution
7
5
Typical Example
3
IGT (25°C) = 35µA
2
100
7
5
3
2
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
Junction Temperature (°C)
Rev.2.00, Mar.01.2005, page 5 of 7
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