SKM100GB063D Просмотр технического описания (PDF) - Semikron

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производитель

SKM100GB063D

Superfast NPT-IGBT Module

Semikron 

SKM 100GB063D

SEMITRANS® 2

Superfast NPT-IGBT

Module

SKM 100GB063D

Characteristics

Symbol Conditions

Inverse Diode

(* 6 (') *  6 .// -B (' 6 / (

9 6 07 8),&

9 6 .07 8),&

(*/

9 6 .07 8)

*

>>?

J

'

*  6 .// -

9 6 .07 8)

9 6 .07 8)

(' 6 .7 (B ()) 6 <// (

>9P

Module

 !!

)'

>))QH''Q

&  

6 07 8)

6 .07 8)

>

 !

?

   4 ?;

?

   ?7

min.

<

07

typ.

.77

.77

F

GG

;

/=7

.

max. Units

.O

(

(

/O

(

./

I

-

E)

L

/;

M2N

</

"

I

I

//7 M2N

7



7



.;/



Features

      

    

 

      

 ! ! 

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  % &   !  '

 & &%%& % ()'

 ($  ) ) )

  %

 * + %  , )- !!

 !   ! 

 $  ! !

    ./   !

 !  0/ 

Typical Applications

      %   

  ! !   

 1

    , % , 2

-)  !  

  %3   #, ./

4"5

This is an electrostatic discharge sensitive device (ESDS), international standard

IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no

characteristics. No warranty or guarantee expressed or implied is made regarding

delivery, performance or suitability.

GB

2

05-09-2006 SEN

© by SEMIKRON

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