DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MSMCJLCE80A Просмотр технического описания (PDF) - Microsemi Corporation

Номер в каталоге
Компоненты Описание
производитель
MSMCJLCE80A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
APPLICATION SCHEMATICS
The TVS low capacitance device configuration is shown in figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 5. In applications where
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and
also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher
reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended rectifier part number for the application in
figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS
devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each
rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in figure 5 and 6 will both result in
twice the capacitance of figure 4.
FIGURE 4
TVS with internal low
capacitance rectifier diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 6
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
RF01002, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 5 of 7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]