DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L6377D Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
L6377D Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
L6377
Table 5.
Electrical characteristcs (continued)
(Vs = 24 V; TJ = -25 to 125 °C; unless otherwise specified.)
Symbol Pin
Parameter
Test condition
Min Typ Max Unit
Vdon
Iolk
Vol
Vcl
Isc
Tmax
Thys
Output voltage drop
Iout = 625 mA; TJ = 25 °C
Iout = 625 mA; TJ = 125 °C
Output leakage current Vi = LOW; Vout = 0
Output low state voltage Vi = HIGH; pin floating
3 Internal voltage clamp (Vs- Io = 200 mA
Vout)
single pulsed =300ms
48
250 350 mV
400 550 mV
100 µA
0.8 1.5 V
53 58 V
Short circuit output current
Vs = 8 to 35 V; Rl = 2 ;
Rsc = 5 to 30 K
Vs = 8 to 35 V;
Rl = 2 ; Rsc < 5 K
Over temperature upper
threshold
5/Rsc = K
A
0.75 1.1 1.5 A
150
°C
Over temperature
hysteresis
20
°C
AC operation
tr-tf 3 Rise or fall time
td
dV/dt
tON
tOFF
fmax
Delay time
Slew rate
(rise and fall edge)
10
On time during short
circuit condition
Off time during short
circuit condition
Maximum operating
frequency
Vs = 24 V; Rl = 70
Rl to ground
Vs = 24 V; Rl = 70
Rl to ground
50 pF < CDON< 2 nF
20
µs
5
µs
0.7 1 1.5 V/µs
1.28
µs/pF
64
tON
25
kHz
Source drain NDMOS diode
Vfsd
Forward on voltage
Ifsd = 625 mA
Ifp
Forward peak current
tp = 10 ms;
duty cycle = 20 %
trr
Reverse recovery time
Ifsd = 500 mA;
dIfsd/dt = 25 A/µs
tfr
Forward recovery time
1 1.5 V
1.5 A
200
ns
50
ns
6/16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]