HTIP117 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HTIP117 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 1/3
HTIP117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP117 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 50 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltage ............................................................................................ -100 V
BVEBO Emitter to Base Voltage ...................................................................................................... -5 V
IC Collector Current (Continue)........................................................................................................ -4 A
IC Collector Current (Peak).............................................................................................................. -6 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-100
-
BVCEO
-100
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
1
-
*hFE2
500
-
Cob
-
-
Darlington Schematic
Max.
-
-
-1
-2
-2
-2.5
-2.8
-
-
200
Unit
Test Conditions
V
IC=-1mA
V
IC=-30mA
mA VCB=-100V
mA VCE=-50V
mA VEB=-5V
V
IC=-2A, IB=-8mA
V
IC=-2A, VCE=-4V
K
IC=-1A, VCE=-4V
IC=-2A, VCE=-4V
pF
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
C
B
HTIP117
R1
R2
E
HSMC Product Specification
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