HTIP112 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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Компоненты Описание

производитель

HTIP112

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200203

Issued Date : 2000.08.01

Revised Date : 2002.03.28

Page No. : 3/4

10000

ON Voltage & Collcetor Current

1000

100

100

25oC

125oC

75oC

VBE(ON) @ VCE=3V

1000

Collector Current-IC (mA)

10000

Capcitance & Reverse-Biased Voltage

100

Cob

10

0.1

1

10

100

Reverse Biased Voltage (V)

Switching Time & Collector Current

10

VCC=30V,IC=250IB1= -250IB2

Tstg

1

Tf

Ton

0.1

1

10

Collector Current-IC (A)

Safe Operating Area

10

PT=1S

PT=1mS

1

PT=100mS

0.1

0.01

1

10

100

Forward Voltage (V)

HTIP112

HSMC Product Specification

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