HTIP31C Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HTIP31C Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6721
Issued Date : 1993.09.24
Revised Date : 2002.03.04
Page No. : 1/3
HTIP31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP31C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
25
-
*hFE2
10
-
fT
3
-
Max.
-
-
200
300
1
1.2
1.8
-
50
-
Unit
Test Conditions
V
V
uA
uA
mA
V
V
MHz
IC=1mA, IE=0
IC=30mA, IC=0
VCE=100V, IB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=3A, IB=375mA
IC=3A, VCE=4V
IC=1A, VCE=4V
IC=3A, VCE=4V
IC=0.5A, VCE=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTIP31C
HSMC Product Specification
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