MURB1610CT Просмотр технического описания (PDF) - LiteOn Technology
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MURB1610CT Datasheet PDF : 2 Pages
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LITE-ON
SEMICONDUCTOR MURB1610CT thru 1620CT
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 100 to 200 Volts
FORWARD CURRENT - 16 Amperes
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHAN2 ICAL DATA
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
D 2 PAK
A
K
1K2
G
E
PIN 1
PIN 2
K
I
D
C
B
F
H
J
K
HEATSINK
D 2 PAK
DIM. MIN. MAX.
A
9.65 10.69
B
14.60 15.88
C
8.25 9.25
D
1.14
1.40
E
0.51
1.14
F
2.29
2.79
G
2.29
2.79
H
2.03
2.92
I
1.14
1.40
J
0.30
0.64
K
4.37
4.83
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TC=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
VRRM
VRMS
VDC
I(AV)
IFSM
MURB1610CT
100
70
100
Maximum forward Voltage at 8.0A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 1)
@TJ =25 C IR
@TJ =150 C
CJ
Maximum Reverse Recovery Time (Note 2)
TRR
Typical Thermal Resistance (Note 3)
R0JC
Operating and Storage Temperature Range
TJ ,TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,recovery to 0.25A.
3.Thermal Resistance Junction to Case.
16
100
0.975
5
250
85
25
3.0
-55 to +150
MURB1620CT
200
140
200
UNIT
V
V
V
A
A
V
uA
pF
ns
C/W
C
REV. 2, 01-Dec-2000, KTGB01
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