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MIC5021 Просмотр технического описания (PDF) - Micrel

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Компоненты Описание
производитель
MIC5021 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MIC5021
Absolute Maximum Ratings
Supply Voltage (VDD)................................................... +40V
Input Voltage .................................................–0.5V to +15V
Sense Differential Voltage .......................................... ±6.5V
Sense + or Sense – to Gnd ...........................–0.5V to +36V
Timer Voltage (CT)...................................................... +5.5V
VBOOST Capacitor..................................................... 0.01µF
Micrel, Inc.
Operating Ratings
Supply Voltage (VDD)..................................... +12V to +36V
Temperature Range
PDIP ..................................................................... –40°C to +85°C
SOIC ...................................................... –40°C to +85°C
Electrical Characteristics
TA = 25°C, Gnd = 0V, VDD = 12V, CT = Open, Gate CL = 1500pF (IRF540 MOSFET) unless otherwise specified
Symbol Parameter
Condition
Min Typ Max Units
D.C. Supply Current
Input Threshold
VDD = 12V, Input = 0V
VDD = 36V, Input = 0V
VDD = 12V, Input = 5V
VDD = 36V, Input = 5V
1.8
4
mA
2.5
6
mA
1.7
4
mA
2.5
6
mA
0.8
1.4
2.0
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Input = 5V
10
20
40
µA
Current Limit Threshold
Note 1
30
50
70
mV
tG(ON)
tG(OFF)
tDLH
tR
tDLH
tF
fmax
Gate On Voltage
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Gate Fall Time
Maximum Operating Frequency
VDD = 12V Note 2
VDD = 36V Note 2
Sense Differential > 70mV
Sense Differential > 70mV, CT = 0pF
Note 3
Note 4
Note 5
Note 6
Note 7
16
18
21
V
46
50
52
V
2
6
10
µs
10
20
50
µs
500 1000 ns
400 500
ns
800 1500 ns
400 500
ns
100 150
kHz
Note 1 When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
Note 2 DC measurement.
Note 3 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Note 4 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Note 5 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Note 6 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Note 7 Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
July 2005
3
MIC5021

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