SMAJ11A Просмотр технического описания (PDF) - General Semiconductor
Номер в каталоге
Компоненты Описание
производитель
SMAJ11A Datasheet PDF : 4 Pages
| |||
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) TABLE 1 (Cont’d)
Device
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
Device
Marking Code
UNI BI
RD ZD
RE ZE
RF
ZF
RG ZG
RH ZH
RK ZK
RL
ZL
RM ZM
RN ZN
RP ZP
RQ ZQ
RR ZR
RS ZS
RT
ZT
RU ZU
RV ZV
RW ZW
RX ZX
RY ZY
RZ
ZZ
SD VD
SE VE
SF VF
SG VG
SH VH
SK VK
SL
VL
SM VM
SN VN
SP VP
SQ VQ
SR VR
Breakdown Voltage
V(BR) (Volts) at IT
(NOTE 1)
Min.
Max.
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.4
71.1
78.6
77.8
95.1
77.8
86
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
Test
Current
IT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1.0
Working Peak
Reverse Voltage
VWM (Volts)
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse
Leakage
a VWM
(NOTE 3) ID (µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Surge Current IPPM
(NOTE 2) (Amps)
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
Maximum Clamping
Voltage at IPPM
Vc (Volts)
3.1
3.4
2.9
3.2
2.8
3.1
2.6
2.9
2.4
2.7
2.2
2.5
2.2
2.4
2
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
NOTES:
(1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) For the bi-directional SMAJ5.0CA, the maximum V(BR) is 7.25V.
(5) All terms and symbols are consistent with ANSI/IEEE C62.35
APPLICATION NOTES
RECOMMENDED PAD LAYOUT
The pad dimensions should be 0.010” (2.5mm) longer than the contact size in the lead
axis. This allows a solder fillet to form, see figure below. Contact factory for soldering
methods.
MODIFIED J-BEND
0.060 MIN
(1.52 MIN)
0.094 MAX
(2.38 MAX)
0.050 MIN
(1.27 MIN)
Dimensions in in0c.h2(52e.05s8R)EaFnd (millimeters)
This device is designed specifically for transient voltage suppression from
threats generated by ESD for board level load switching components.
The wide leads assure a large surface contact for good heat dissipation,
and a low resistance path for surge current flow to ground.
This series is designed to optimize board space and for use with surface
mount technology automated assembly equipment.
They can be easily mounted on printed circuit boards and ceramic
substrates to protect sensitive components from transient voltage
damage.
Share Link: 