APT50M50JFLL Просмотр технического описания (PDF) - Microsemi Corporation
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APT50M50JFLL Datasheet PDF : 5 Pages
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356
100
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
1 SINGLE PULSE
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 71A
10mS
12
VDS=100V
VDS=250V
VDS=400V
8
4
0
0 50 100 150 200 250 300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
120
100
80 VDD = 333V
RG = 3Ω
60 TJ = 125°C
L = 100µH
40
td(off)
20
td(on)
0
10
30
50
70
90
110
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
3000
2500
2000
VDD = 333V
RG = 3Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
1500
1000
500
Eon
Eoff
0
10
30
50
70
90
110
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT50M50JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
VDD = 333V
140 RG = 3Ω
TJ = 125°C
tf
120 L = 100µH
100
80
60
40
tr
20
0
10
30
50
70
90
110
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
7000
6000
5000
VDD = 333V
ID = 71A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
Eoff
4000
3000
2000
Eon
1000
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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