APT5010JFLL Просмотр технического описания (PDF) - Advanced Power Technology
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APT5010JFLL Datasheet PDF : 5 Pages
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176
100
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 41A
10mS
12
VDS=100V
8
VDS=250V
VDS=400V
4
0
0 20 40 60 80 100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
70
td(off)
60
VDD = 333V
50 RG = 5Ω
TJ = 125°C
40 L = 100µH
30
20
td(on)
10
0
10 20 30 40 50 60 70
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
1500
VDD = 333V
RG = 5Ω
1200 TJ = 125°C
L = 100µH
900
EON includes
diode reverse recovery.
Eon
600
300
Eoff
0
10 20 30 40 50 60 70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT5010JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
10
TJ =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
VDD = 333V
90 RG = 5Ω
80 TJ = 125°C
L = 100µH
70
60
tf
50
40
tr
30
20
10
0
10 20 30 40 50 60 70
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
1500
VDD = 333V
ID = 41A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
Eoff
1000
Eon
500
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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