IDT70T651S008BFI Просмотр технического описания (PDF) - Integrated Device Technology
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IDT70T651S008BFI
Integrated Device Technology
IDT70T651S008BFI Datasheet PDF : 27 Pages
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IDT70T651/9S
High-Speed 2.5V 256/128K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage(1)
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC
0V 2.5V + 100mV
Industrial
-40OC to +85OC
0V
2.5V + 100mV
NOTE:
5632 tbl 04
1. This is the parameter TA. This is the "instant on" case temperature.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol
Parameter
Conditions(2) Max. Unit
CIN Input Capacitance
VIN = 3dV
8 pF
COUT(3) Output Capacitance
VOUT = 3dV 10.5 pF
NOTES:
5632 tbl 08
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
Unit
& Industrial
VTERM
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to 3.6
V
VTERM(2)
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3 V
VTERM(2)
Input and I/O Terminal
-0.3 to VDDQ + 0.3 V
(INPUTS and I/O's) Voltage with Respect to GND
TBIAS(3)
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-65 to +150
oC
TJN
Junction Temperature
+150
oC
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
NOTES:
5632 tbl 07
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed VDDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Recommended DC Operating
Conditions with VDDQ at 2.5V
Symbol
Parameter
Min. Typ.
Max.
Unit
VDD Core Supply Voltage
2.4
2.5
2.6
V
VDDQ I/O Supply Voltage(3)
2.4
2.5
2.6
V
VSS Ground
0
0
0
V
Input High Volltage
VIH (Address, Control &
Data I/O Inputs)(3)
VIH
Input High Voltage _
JTAG
1.7
____ VDDQ + 100mV(2) V
1.7
____ VDD + 100mV(2)
V
VIH
Input High Voltage -
ZZ, OPT, M/S
VDD - 0.2V ____ VDD + 100mV(2)
V
VIL Input Low Voltage
-0.3(1)
____
0.7
V
VIL
Input Low Voltage -
ZZ, OPT, M/S
-0.3(1)
____
0.2
V
NOTES:
5632 tbl 05
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VSS(0V), and VDDQX for that port must be
supplied as indicated above.
Recommended DC Operating
Conditions with VDDQ at 3.3V
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD Core Supply Voltage
2.4
2.5
2.6
V
VDDQ I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS Ground
0
0
0
V
Input High Voltage
VIH (Address, Control
&Data I/O Inputs)(3)
2.0
____ VDDQ + 150mV(2) V
VIH
Input High Voltage _
JTAG
1.7
____ VDD + 100mV(2)
V
VIH
Input High Voltage -
ZZ, OPT, M/S
VDD - 0.2V ____ VDD + 100mV(2) V
VIL Input Low Voltage
-0.3(1)
____
0.8
V
VIL
Input Low Voltage -
ZZ, OPT, M/S
-0.3(1)
____
0.2
V
5632 tbl 06
NOTES:
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be
supplied as indicated above.
8
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