EGP50A Просмотр технического описания (PDF) - Vishay Semiconductors
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EGP50A Datasheet PDF : 4 Pages
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EGP50A thru EGP50G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
Maximum instantaneous
forward voltage
5.0 A
VF
0.95
1.25
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance 4.0 V, 1 MHz
CJ
5.0
50
50
95
µA
ns
75
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
Typical thermal resistance (1)
RθJA
RθJL
20
5.0
°C/W
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
EGP50G-E3/54
1.01
54
EGP50G-E3/73
1.01
73
EGP50GHE3/54 (1)
1.01
54
EGP50GHE3/73 (1)
1.01
73
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1400
1000
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6.0
Resistive or Inductive Load
5.0
4.0
Copper Heatsinks
3.0
2.0
TL
L
1.0 0.375" (9.5 mm)
Lead Length
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
175
TJ = TJ Max.
150
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88585
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 20-Aug-07
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