BUK9K17-60E Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9K17-60E Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9K17-60E
Dual N-channel 60 V, 17 mΩ logic level MOSFET
Symbol
Parameter
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Source-drain diode FET1 and FET2
IS
source current
ISM
peak source current
Avalanche Ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
Min Max Unit
-
148 A
-55 175 °C
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[3]
-
-
26
A
148 A
ID = 26 A; Vsup ≤ 60 V; VGS = 10 V;
Tj(init) = 25 °C; Fig. 4
[4][5] -
64
mJ
[1] Accumulated Pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS.
[3] Continuous current is limited by package.
[4] Refer to application note AN10273 for further information
[5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
120
Pder
(%)
80
03aa16
40
ID
(A)
30
003aal082
20
40
10
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
30
60
90 120 150 180
Tj (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
BUK9K17-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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