BUK9K17-60E Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9K17-60E Datasheet PDF : 13 Pages
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BUK9K17-60E
Dual N-channel 60 V, 17 mΩ logic level MOSFET
19 March 2014
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET
• Q101 Compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
[1]
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
60
V
-
-
26
A
-
-
53
W
-
14
17
mΩ
-
5.7 -
nC
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