B1110 Просмотр технического описания (PDF) - LiteOn Technology
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B1110 Datasheet PDF : 2 Pages
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LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
B170 thru B1100
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
SMA
SMA
A
DIM. MIN. MAX.
A
4.06 4.57
B
C
B
2.29 2.92
C
1.27 1.63
D
0.15 0.31
E
4.83 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.62
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
B170
Maximum Recurrent Peak Reverse Voltage
VRRM
70
Maximum RMS Voltage
VRMS
49
Maximum DC Blocking Voltage
VDC
70
Maximum Average Forward
Rectified Current
@TL =100 C I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
Maximum forward
Voltage at 1.0A DC
@TJ =25 C
VF
@TJ =100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
Typical Junction
Capacitance (Note 1)
CJ
Typical Thermal Resistance (Note 2)
R0JL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
B180
80
56
80
B190
90
63
90
1.0
B1100
100
70
100
UNIT
V
V
V
A
30
0.79
0.69
0.5
5.0
30
25
-55 to +125
-55 to +150
A
V
mA
pF
C/W
C
C
REV. 2, 01-Dec-2000, KSHA02
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