BCX17LT1G Просмотр технического описания (PDF) - ON Semiconductor
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BCX17LT1G Datasheet PDF : 4 Pages
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BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA 300 mA
500 mA
0.2
0
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
1.0
TA = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
+1
qVC for VCE(sat)
0
10
-1
-2
qVB for VBE
1
1
10
100
1000
0.1
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
Cib
Cob
1
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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3
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