HE8551G(2019) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

HE8551G
(Rev.:2019)

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

Unisonic Technologies 

HE8551

 TYPICAL CHARACTERISTICS

Fig. 1 Static Characteristics

-0.5

-0.4

IB=-3.0mA

-0.3

IB=-2.5mA

IB=-2.0mA

-0.2

IB=-1.5mA

IB=-1.0mA

-0.1

IB=-0.5mA

0

-0 -0.4 -0.8 -1.2 -1.6 -2.0

Collector-Emitter Voltage, VCE ( V)

PNP SILICON TRANSISTOR

Fig. 2 DC Current Gain

103

102

VCE=-1V

101

100-10-1

-100 -101

-102

-103

Collector Current, IC (mA)

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www.unisonic.com.tw

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QW-R201-047.H

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