HE8551G(2019) Просмотр технического описания (PDF) - Unisonic Technologies
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HE8551G Datasheet PDF : 4 Pages
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HE8551
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (TA=25°C)
TO-92
TO-92NL
VCBO
VCEO
VEBO
PC
-40
V
-25
V
-6
V
0.625
W
0.9
W
Collector Current
IC
-1.5
A
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
COB
IC=-100A, IE=0
IC=-2mA, IB=0
IE=-100A, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE2
MIN TYP MAX UNIT
-40
V
-25
V
-6
V
-100 nA
-100 nA
45
170
85
160 500
40
80
-0.28 -0.5
V
-0.98 -1.2
V
-0.66 -1.0
V
100 190
MHz
9.0
pF
RANK
RANGE
C
120-200
D
160-300
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-047.H
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