LITE-ON
SEMICONDUCTOR
SCHOTTKY BARRIER RECTIFIERS
SB170 thru SB1100
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
DO-41
A
B
A
C
D
DO-41
Dim.
Min.
Max.
A
25.4
-
B
4.10
5.20
C
0.71
0.86
D
2.00
2.70
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃ Ratings at 25 ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Lengths
@TL=100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
VRRM
VRMS
VDC
I(AV)
IFSM
SB170
70
49
70
Maximum Forward
IF=1.0A,TJ=25 C
Voltage at
IF=1.0A,TJ=100 C
VF
Maximum DC Reverse Current
@TJ=25 C
at Rated DC Blocking Voltage
@TJ=100 C
IR
Typical Junction Capacitance (Note 1)
CJ
Typical Thermal Resistance (Note 2)
R0JL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
SB180
80
56
80
SB190
90
63
90
1.0
SB1100
100
70
100
UNIT
V
V
V
A
40
0.79
0.69
0.02
2.0
30
15
-55 to +150
-55 to +150
A
V
mA
pF
C/W
C
C
REV. 9, Nov-2013, KDHC03