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OM6216SS

TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE

Unspecified 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6216SS (Per FET) (400 Volt)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IDSS

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

400

V VGS = 0,

ID = 250 mA

2.0

4.0 V VDS = VGS, ID = 250 mA

±100 nA VGS = ±20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

15

A VDS 2 VDS(on), VGS = 10 V

2.0 2.4 V VGS = 10 V, ID = 8 A

RDS(on) Static Drain-Source On-State

Resistance1

0.25 0.3

VGS = 10 V, ID = 8 A

RDS(on) Static Drain-Source On-State

Resistance1

0.50 0.60

VGS = 10 V, ID = 8 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6217SS (Per FET) (500 Volt)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IDSS

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

500

V

2.0

4.0 V

±100 nA

0.1 0.25 mA

0.2 1.0 mA

13

A

2.1 2.8 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = ±20 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS 2 VDS(on), VGS = 10 V

VGS = 10 V, ID = 7 A

RDS(on) Static Drain-Source On-State

Resistance1

0.3 0.4

VGS = 10 V, ID = 7 A

RDS(on) Static Drain-Source On-State

Resistance1

0.66 0.88

VGS = 10 V, ID = 7 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

8.0 9.6

2900

450

150

30

40

80

30

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 58A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 200 V, ID @ 8.0 A

ns Rg =5.0 W , VGS =10V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

6.0 7.2

2600

280

40

30

46

75

31

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 7 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 210 V, ID @ 7.0 A

ns Rg = 5.0 W , VGS = 10 V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

- 15 A Modified MOSPOWER

D

(Body Diode)

ISM

Source Current1

symbol showing

G

- 60 A the integral P-N

(Body Diode)

Junction rectifier.

S

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

- 13 A Modified MOSPOWER

D

(Body Diode)

ISM

Source Current1

symbol showing

G

- 52 A the integral P-N

(Body Diode)

Junction rectifier.

S

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 1.6 V TC = 25 C, IS = -15 A, VGS = 0 VSD Diode Forward Voltage1

400

ns TJ = 150 C,IF = IS,

trr

Reverse Recovery Time

dlF/ds = 100 A/ms

- 1.4 V TC = 25 C, IS = -13 A, VGS = 0

400

ns TJ = 150 C,IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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