INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP50
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 10V
ICES
Collector Cutoff Current
VCE= 500V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 300V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
hFE-2
DC Current Gain
IC= 1A; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
MIN MAX UNIT
400
V
1.0
V
1.5
V
1.0
mA
1.0
mA
1.0
mA
30
150
10
10
MHz
isc Website:www.iscsemi.cn