TIP50 Просмотр технического описания (PDF) - Inchange Semiconductor
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TIP50 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP50
DESCRIPTION
·DC Current Gain -hFE = 30~150@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
APPLICATIONS
·Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICM
Collector Current-Peak
2.0
A
IBB
Base Current
Collector Power Dissipation
TC=25℃
PD
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.6
A
40
W
2
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX UNIT
3.125 ℃/W
62.5 ℃/W
isc Website：www.iscsemi.cn
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