SFT6678 Просмотр технического описания (PDF) - Solid State Devices, Inc.
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SFT6678 Datasheet PDF : 3 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Collector Cutoff Current
VCE= 400V, VBE(off) =1.5V
VCE= 650V, VBE(off) =1.5V
VCE= 650V, VBE(off) =1.5V
Collector – Base Leakage Current
SFT6678 SERIES
Symbol Min Max Units
TC = 25°C
TC = 25°C
ICEV
TC = 125°C
VCB = 650V
ICBO
-
-
0.5 µA
1.0 µA
50
µA
-
1
mA
Emitter Cutoff Current
(VEB = 8V, IC = 0)
IEBO
-
2
mA
Collector-Emitter Sustaining Voltage
(IC = 200mA, IB = 0)
VCEO(sus)
400
-
V
DC Current Gain*
VCE = 3V, 1C = 15A, TA = 25°C
VCE = 3V, 1C = 1A, TA = 25°C
VCE = 3V, 1C = 15A,TA = -55°C
HFE1
HFE2
HFE3
8
20
15
40
4
-
Base-Emitter Saturation Voltage*
(IC = 15A, IB = 3A)
VBE (SAT)
-
1.5
V
Collector-Emitter Saturation Voltage*
(IC = 15A, IB = 3A)
(TC = 25°C)
(TC = 125°C)
VCE (SAT)
-
-
1.0
2.0
V
Current Gain
(IC = 1A, VCE = 10V, f = 5MHz)
Output Capacitance
(VCB = 10V , f = 0.1MHz)
|hFE|
3
10
Cob
150 500 pF
Delay Time
(VCC = 200V, IC = 15A, IB1 = IB2 = 3A, tP = 50 μsec, Duty
Cycle < 2%, VB = 6V, RL = 13.5Ω)
td
-
0.1
t(on)
Rise Time
tr
-
2.5
µsec
Storage Time
Fall Time
Cross Over Time (IC = 15 A(pk), VCLAMP = 450V, IB1 = 3 A, VBE(off) = 6V)
ts
-
0.6
t(off)
tf
-
0.5
tc
-
0.5 µsec
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019D
DOC
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