BD544B Просмотр технического описания (PDF) - Power Innovations Ltd

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BD544B

PNP SILICON POWER TRANSISTORS

Power Innovations Ltd 

BD544, BD544A, BD544B, BD544C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS634AI

VCE = -4 V

TC = 25°C

tp = 300 µs, duty cycle < 2%

100

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS634AE

-10

IC = -300 mA

IC = -1 A

IC = -3 A

IC = -6 A

-1·0

10

-0·1

1·0

-0·1

-1·0

IC - Collector Current - A

Figure 1.

-0·01

-10

-0·001

-0·01

-0·1

-1·0

-10

IB - Base Current - A

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

-1·2

TCS634AF

VCE = -4 V

TC = 25°C

-1·1

-1·0

-0·9

-0·8

-0·7

-0·6

-0·1

-1·0

-10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

3

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