MJE5852 Просмотр технического описания (PDF) - STMicroelectronics
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MJE5852 Datasheet PDF : 4 Pages
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MJE5852
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = -1.5V)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = -450 V
VEB = -6 V
IC = -10 mA
IC = -4 A
IC = -8 A
IB = -1 A
IB = -3 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -4 A
IB = -1 A
hFE∗ DC Current Gain
IC = -2 A
IC = -5 A
VCE = -5 V
VCE = -5 V
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = -4 A
IB1 = -IB2 = -1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
VCC = -250 V
tp = 40 µs
Min. Typ.
-400
15
5
Max.
-500
-1
-2
-5
-1.5
2
0.5
Unit
µA
mA
V
V
V
V
µs
µs
2/4
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