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CS5253-1GDP5 Просмотр технического описания (PDF) - ON Semiconductor

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CS5253-1GDP5
ONSEMI
ON Semiconductor ONSEMI
CS5253-1GDP5 Datasheet PDF : 10 Pages
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CS52531
Current Limit
The internal current limit circuit limits the output current
under excessive load conditions.
Short Circuit Protection
The device includes short circuit protection circuitry that
clamps the output current at approximately 500 mA less than
its current limit value. This provides for a current foldback
function, which reduces power dissipation under a direct
shorted load.
Thermal Shutdown
The thermal shutdown circuitry is guaranteed by design to
activate above a die junction temperature of approximately
150°C and to shut down the regulator output. This circuitry
has 25°C of typical hysteresis, thereby allowing the
regulator to recover from a thermal fault automatically.
Calculating Power Dissipation and Heat Sink
Requirements
High power regulators such as the CS52531 usually
operate at high junction temperatures. Therefore, it is
important to calculate the power dissipation and junction
temperatures accurately to ensure that an adequate heat sink
is used. Since the package tab is connected to VOUT on the
CS52531, electrical isolation may be required for some
applications. Also, as with all high power packages, thermal
compound in necessary to ensure proper heat flow. For
added safety, this high current LDO includes an internal
thermal shutdown circuit
The thermal characteristics of an IC depend on the
following four factors: junction temperature, ambient
temperature, die power dissipation, and the thermal
resistance from the die junctiontoambient air. The
maximum junction temperature can be determined by:
TJ(max) + TA(max) ) PD(max) RqJA
The maximum ambient temperature and the power
dissipation are determined by the design while the
maximum junction temperature and the thermal resistance
depend on the manufacturer and the package type. The
maximum power dissipation for a regulator is:
PD(max) + (VIN(max) * VOUT(min))IOUT(max)
) VIN(max) Iq
A heat sink effectively increases the surface area of the
package to improve the flow of heat away from the IC and
into the surrounding air. Each material in the heat flow path
between the IC and the outside environment has a thermal
resistance which is measured in degrees per watt. Like series
electrical resistances, these thermal resistances are summed
to determine the total thermal resistance between the die
junction and the surrounding air, RqJA. This total thermal
resistance is comprised of three components. These resistive
terms are measured from junction to case (RqJC), case to heat
sink (RqCS), and heat sink to ambient air (RqSA). The
equation is:
RqJA + RqJC ) RqCS ) RqSA
The value for RqJC is 2.5°C/watt for the CS52531 in the
D2PAK5 package. For a high current regulator such as the
CS52531 the majority of heat is generated in the power
transistor section. The value for RqSA depends on the heat
sink type, while the RqCS depends on factors such as
package type, heat sink interface (is an insulator and thermal
grease used?), and the contact area between the heat sink and
the package. Once these calculations are complete, the
maximum permissible value of RqJA can be calculated and
the proper heat sink selected. For further discussion on heat
sink selection, see our application note “Thermal
Management,” document number AND8036/D, available
through the Literature Distribution Center or via our website
at http://www.onsemi.com.
http://onsemi.com
9

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