RMPA39000 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

RMPA39000

37–40 GHz GaAs MMIC Power Amplifier

Fairchild Semiconductor 

Vg

(Negative)

2 mil Gap

5mil Thick

Alumina

50Ω

RF

Input

10,000 pF

100 pF

10,000 pF

100 pF

Vd

(Positive)

Die-Attach

80Au/20Sn

5 mil Thick

Alumina

50Ω

RF

Output

L< 0.015"

(4 Plcs)

100 pF

100 pF

10,000 pF

Vg

(Negative)

Vd

(Positive)

10,000 pF

Note:

Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.

Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.

Figure 4. Recommended Assembly and Bonding Diagram

©2004 Fairchild Semiconductor Corporation

RMPA39000 Rev. D

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