RMPA39000 Просмотр технического описания (PDF) - Fairchild Semiconductor

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RMPA39000

37–40 GHz GaAs MMIC Power Amplifier

Fairchild Semiconductor 

Electrical Characteristics 50Ω system, Vd = +5V, Quiescent current (Idq) = 700mA

Parameter

Frequency Range

Gain Supply Voltage (Vg)1

Gain Small Signal at Pin = 0dBm

Gain Variation vs. Frequency

Power Output at 1dB Compression

Power Output Saturated (Pin = +13dBm)

Drain Current at Pin = 0dBm

Drain Current at P1dB Compression

Drain Current at Psat (Pin = +13dBm)

Power Added Efficiency (PAE) at P1dB

OIP3 (17dBm/Tone) (10 MHz Tone Sep.)

Input Return Loss (Pin = -10dBm)

Output Return Loss (Pin = -10dBm)

Min

Typ

Max

37

40

-0.15

20

24

±1

28

27.5

29

700

730

750

17

36

8

7

Note:

1. Typical range of the negative gate voltage is -0.5V to 0.0V to set typical Idq of 700mA.

Units

GHz

V

dB

dB

dBm

dBm

mA

mA

mA

%

dBm

dB

dB

©2004 Fairchild Semiconductor Corporation

RMPA39000 Rev. D

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