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RMPA39000

37–40 GHz GaAs MMIC Power Amplifier

Fairchild Semiconductor 

June 2004

RMPA39000

37–40 GHz GaAs MMIC Power Amplifier

General Description

The Fairchild Semiconductor RMPA39000 is a high

efficiency power amplifier designed for use in point to point

and point to multi-point radios, and various communi-

cations applications. The RMPA39000 is a 3-stage GaAs

MMIC amplifier utilizing our advanced 0.15µm gate length

Power PHEMT process and can be used in conjunction

with other driver or power amplifiers to achieve the required

total power output.

Features

• 24dB small signal gain (typ.)

• 29dBm saturated power out (typ.)

• Circuit contains individual source vias

• Chip size 4.28mm x 2.90mm x 50µm

Device

Absolute Ratings

Symbol

Vd

Vg

Vdg

ID

PIN

TC

TSTG

R JC

Parameter

Positive DC Voltage (+5V Typical)

Negative DC Voltage

Simultaneous (Vd–Vg)

Positive DC Current

RF Input Power (from 50Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

Ratings

+6

-2

+8

1092

+20

-30 to +85

-55 to +125

17

Units

V

V

V

mA

dBm

°C

°C

°C/W

©2004 Fairchild Semiconductor Corporation

RMPA39000 Rev. D

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