1N4691 Просмотр технического описания (PDF) - Vishay Siliconix
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1N4691 Datasheet PDF : 6 Pages
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Silicon Epitaxial Planar Z–Diodes
Features
D Zener voltage specified at 50 mA
D Maximum delta VZ given from 10 mA to 100 mA
D Very high stability
D Low noise
1N4678...1N4717
Vishay Telefunken
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol Value Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
°C
Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Type
Forward voltage
IF=100mA
Symbol
Value
Unit
RthJA
300
K/W
Symbol Min Typ Max Unit
VF
1.5 V
Document Number 85586
Rev. 2, 01-Apr-99
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