HU603AL Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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HU603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data

Issued Date : 1998.07.01

Revised Date : 1999.08.01

Page No. : 4/5

Transductance Variation & Drain Current &

Temperature

30

TJ=25°C

25

TJ=125°C

20

15

10

5

0

0

10

20

30

40

50

Drain Current (A)

Maximum Safe Operating Area

100

Rds(on) Line

10

VGS=20V

Single Pulse

TC=25°C

1

0.1

1

10

Drain-Source Voltage (V)

1us

1ms

10ms

100ms

Dc

100

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.1

Single Pulse

Trancient Thermal Response Curve

RθJC(t) = r(t) * RθJC(t)

RθJC =2.5 °C / W

P(pk)

t1

t2

TJ-TC=P* RθJC(t)

Duty Cycle,D=t1/t2

1

10

100

Time (ms)

1000

HSMC Product Specification

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