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SL13HE3/61T Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
SL13HE3/61T
Vishay
Vishay Semiconductors Vishay
SL13HE3/61T Datasheet PDF : 4 Pages
1 2 3 4
SL12 & SL13
Vishay General Semiconductor
100
TJ = 125 °C
10
TJ = 25 °C
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88740 For technical questions within your region, please contact one of the following:
Revision: 22-Jan-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3

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