M48T129V Просмотр технического описания (PDF) - STMicroelectronics

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производитель

M48T129V

3.3V-5V 1 Mbit (128Kb x8) TIMEKEEPER® SRAM

STMicroelectronics 

M48T129Y, M48T129V

Figure 6. Power Down/Up Mode AC Waveforms

VCC

VPFD (max)

VPFD (min)

VSO

INPUTS

tF

tFB

RECOGNIZED

OUTPUTS

RST

VALID

tRB

DON’T CARE

HIGH-Z

tR

tREC

RECOGNIZED

VALID

AI01805

Table 7. Power Down/Up Trip Points DC Characteristics (1)

(TA = 0 to 70 °C)

Symbol

Parameter

Min

VPFD Power-fail Deselect Voltage

M48T129Y

4.2

M48T129V

2.7

M48T129Y

VSO

Battery Back-up Switchover Voltage

M48T129V

tDR (2) Expected Data Retention Time

10

Note: 1. All voltages referenced to VSS.

2. At 25°C.

Typ

4.35

2.9

3.0

VPFD –100mV

Max

Unit

4.5

V

3.0

V

V

V

YEARS

Table 8. Power Down/Up AC Characteristics

(TA = 0 to 70 °C)

Symbol

Parameter

Min

Max

Unit

tF (1)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

M48T129Y

10

µs

tFB (2)

VPFD (min) to VSS VCC Fall Time

M48T129V

150

µs

tR

VPFD (min) to VPFD (max) VCC Rise Time

10

µs

tRB

VSS to VPFD (min) VCC Rise Time

1

µs

tREC

VPFD (max) to RST High

40

200

ms

Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 50µs after VCC passes

VPFD (min).

2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

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