BUZ76 Просмотр технического описания (PDF) - Siemens AG

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производитель

BUZ76

SIPMOS ® Power Transistor

Siemens AG 

BUZ 76

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

Unit

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 2 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.5 A

RGS = 50 Ω

gfs

2.1

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

S

3

-

pF

430

650

65

100

25

40

ns

8

12

30

45

55

75

30

40

Semiconductor Group

3

07/96

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