ACT-9S512K8N-017L2T Просмотр технического описания (PDF) - Aeroflex Corporation
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ACT-9S512K8N-017L2T Datasheet PDF : 6 Pages
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ACT-PS512K8 High Speed
4 Megabit Plastic Monolithic SRAM
Plastic Path™ Features
s Low Power Monolithic CMOS 512K x 8 SRAM
s Operating Temperature Range
q Full Military (-55°C to +125°C)
q Industrial (-40°C to +85°C)
s Burn-in and Temperature Cycle Available
s 10, 12, 15, 17, 20 & 25ns Access Times
s +5V Power Supply
s Industry Standard Pinouts
q Center Power / Ground Pins
s TTL Compatible I/O
s 3.3V Device I/O Interfacing
s JEDEC Standard 36 pin Plastic SOJ Package
q 36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOJ),
Aeroflex code# "L2"
s Fully Static Operation
q No Clocks or Refresh Required
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FLEX LAB
ISO
9001
CE R T I F I E D
Block Diagram – SOJ (L2)
CE
WE
OE
A0 – A18
Vss
512Kx8
Vcc
8
I/O0-7
Pin Description
I/O0-7
A0–18
WE
CE
OE
VCC
VSS
NC
Data I/O
Address Inputs
Write Enable
Chip Enable
Output Enable
Power Supply
Ground
Not Connected
General Description
The ACT-PS512K8 is a
Plastic High Speed, 4 Megabit
(4,194,304 bits) CMOS
Monolithic SRAM organized as
524,288 words by 8 bits.
Designed for high-speed, high
density, high reliablility, mass
memory and fast cache system
applications.
The plastic monolithic is
input and output TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
10ns 12ns, 15ns, 17ns, 20ns
and 25ns are standard.
eroflex Circuit Technology - Advanced Multichip Modules © SCD3764 REV A 6/2/98
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