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RMPA29200 Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание
производитель
RMPA29200
Fairchild
Fairchild Semiconductor Fairchild
RMPA29200 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
June 2004
RMPA29200
29–31 GHZ 2 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor’s RMPA29200 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA29200 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
Features
• 17dB small signal gain (typ.)
• 33dBm saturated power out (typ.)
• DC Bias connections on top or bottom side
• Circuit contains individual source vias
• Chip size 4.00mm x 2.98mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
R JC
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
+8
2450
+22
-30 to +85
-55 to +125
5.6
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D

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