TZS4693-GS08(2006) Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
TZS4693-GS08 Datasheet PDF : 7 Pages
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Typical Characteristics
Tamb = 25 °C, unless otherwise specified
600
500
400
300
200
100
0
0
95 9602
40 80 120 160 200
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Tj = 25 °C
100
IZ = 5 mA
10
1
0
5 10 15 20 25
95 9598
VZ - Z-Voltage (V)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
1.3
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
1.1
6 x 10-4/K
4 x 10-4/K
2 x 10-4/K
1.0
0
- 2 x 10-4/K
0.9
- 4 x 10-4/K
0.8
- 60
95 9599
0 60 120 180 240
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Document Number 85613
Rev. 1.5, 15-Mar-06
TZS4678 to TZS4717
Vishay Semiconductors
15
10
5
IZ = 5 mA
0
-5
0 10 20 30 40 50
95 9600
V - Z-Voltage (V)
Z
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
200
150
VR = 2 V
100
Tj = 25 °C
50
0
0
95 9601
5 10 15 20 25
VZ - Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
Tj = 25 °C
1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0
95 9605
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
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